Abstract
Defect mode analysis for pure aluminum was done to improve fabrication of very large high-resolution thin film transistor liquid crystal displays with very low gate line delay. Mouse hole defects in pure aluminum films are caused by the stress voiding due to the heating/cooling process and by vacancy diffusion. An oxygen treatment between the molybdenum and aluminum depositions is very effective in completely suppressing mouse hole formation. An additive material is also effective in suppressing mouse holes because of the reduction in grain size and the vacancy pinning. Blisters are created during heating processes and can be suppressed by using a MoTa/Mo/aluminum structure or by removal of the undercoat layer.
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