Molecular simulation of a gas-phase reaction in a low-pressure CVD reactor

Abstract

Abstract Flows of SiEH4 in a model CVD reactor are examined by use of the Monte Carlo Direct Simulation method. Decomposition of SiH4 into SiH2 and H2 in gas-phase is taken into consideration by introducing a reactive-collision model. On the substrate surface, only the SiH2 molecule is assumed to decompose into Si and H2 with a given probability, depositing a Si film. Effects of the Knudsen number and the SiH2 deposition probability on the distribution of the growth rate of Si film are examined in detail. As the Knudsen number decreases, the uniformity of the growth rate increases.