Abstract
CF 4 gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of CF 4 gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other CF x radicals, such as CF 2 and CF 3 , were not seen in this experiment whereas strong C and C 2 emissions, dissociation products of CF 4 gas, were observed.
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