Molecular electron doping to single-walled carbon nanotubes and molybdenum disulfide monolayers

Abstract

Carrier doping is an essential way to inject holes and electrons to electronic materials, which modulates their transport properties. While the substitution of heteroatoms essentially modulates the band structure of most semiconducting materials, chemical (molecular) doping can achieve relatively reliable carrier concentration modulation, particularly for nanocarbons and two-dimensional semiconductors. Compared to p-type counterparts, the stabilization of n-type carbon materials has been a challenge not only for basic science but also for various electronic device applications. This Mini-Review describes rational concepts for, and the results of, a stable n-type doping technique mainly for carbon nanotubes using molecular reactions and interactions. The stable n-type carbon nanotubes with controlled carrier concentration are implemented in complementary circuits and thermoelectric energy harvesters. The molecular and supramolecular n-type doping is not limited for carbon nanotubes, but is utilized in the fabrication of conducting transition metal dichalcogenides such as a molybdenum disulphide (MoS2) monolayer.