(Invited) Radiation-Hard Semiconducting Carbon Nanotube Thin-Film Complementary Circuits

Abstract

Carbon nanotubes (CNTs) have emerged as promising solution-processed semiconductors for a variety of thin-film electronic devices [1-5] and circuits [6-12]. In particular, the development of stable n-type enhancement-mode doping strategies [13] have enabled the fabrication of complementary integrated circuits [14] with sophisticated functionality such as static random access memory (SRAM) [15]. Since carbon nanomaterials are expected to have low interaction cross-sections with high-energy radiation, CNT thin-film circuits may be especially well-suited for satellite and space applications. To assess this potential, this talk will explore the radiation hardness of complementary circuits based on CNT thin-film transistors. Specifically, CNT-based inverter circuits are studied as a function of total ionizing dose (TID) by a Co-60 gamma ray source. In addition to the response of the individual p-type and n-type transistors, overall inverter circuit metrics (e.g., noise margins, gain, and static dissipated power) are monitored as a function of TID. Under realistic dynamic bias conditions, these CNT-based complementary circuits are found to be radiation-hard with deviations from pre-radiation operation by less than 2%. This work thus establishes CNT thin-film circuits as a promising candidate for next-generation satellite and space electronics. [1] D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks, and M. C. Hersam, “Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing,” Chem. Soc. Rev., 42, 2824 (2013). [2] V. K. Sangwan, R. P. Ortiz, J. M. P. Alaboson, J. D. Emery, M. J. Bedzyk, L. J. Lauhon, T. J. Marks, and M. C. Hersam, “Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics,” ACS Nano, 6, 7480 (2012). [3] M. Engel, M. Steiner, J.-W. T. Seo, M. C. Hersam, and P. Avouris, “Hot spot dynamics in carbon nanotube array devices,” Nano Lett., 15, 2127 (2015). [4] S. Jang, B. Kim, M. L. Geier, M. C. Hersam, and A. Dodabalapur, “Short channel field-effect-transistors with inkjet-printed semiconducting carbon nanotubes,” Small, 11, 5505 (2015). [5] B. Kim, K. Liang, M. L. Geier, M. C. Hersam, and A. Dodabalapur, “Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures,” Appl. Phys. Lett., 109, 023515 (2016). [6] M. Ha, J.-W. T. Seo, P. L. Prabhumirashi, W. Zhang, M. L. Geier, M. J. Renn, C. H. Kim, M. C. Hersam, and C. D. Frisbie, “Aerosol jet printed, low voltage, electrolyte-gated carbon nanotube ring oscillators with sub-5 µs stage delays,” Nano Lett., 13, 954 (2013). [7] B. Kim, S. Jang, M. L. Geier, P. L. Prabhumirashi, M. C. Hersam, and A. Dodabalapur, “High-speed, inkjet-printed carbon nanotube/zinc tin oxide hybrid complementary ring oscillators,” Nano Lett., 14, 3683 (2014). [8] B. Kim, S. Jang, M. L. Geier, P. L. Prabhumirashi, M. C. Hersam, and A. Dodabalapur, “Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures,” Appl. Phys. Lett., 104, 062101 (2014). [9] B. Kim, M. L. Geier, M. C. Hersam, and A. Dodabalapur, “Complementary D flip-flops based on inkjet printed single-walled carbon nanotubes and zinc tin oxide,” IEEE Electron Device Lett., 35, 1245 (2014). [10] D. Jariwala, V. K. Sangwan, J.-W. T. Seo, W. Xu, J. Smith, C. H. Kim, L. J. Lauhon, T. J. Marks, and M. C. Hersam, “Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors,” Nano Lett., 15, 416 (2015). [11] B. Kim, J. Park, M. L. Geier, M. C. Hersam, and A. Dodabalapur, “Voltage-controlled ring oscillators based on inkjet printed carbon nanotubes and zinc tin oxide,” ACS Appl. Mater. Interfaces, 7, 12009 (2015). [12] B. Kim, M. L. Geier, M. C. Hersam, and A. Dodabalapur, “Inkjet printed circuits on flexible and rigid substrates based on ambipolar carbon nanotubes with high operational stability,” ACS Appl. Mater. Interfaces, 7, 27654 (2015). [13] M. L. Geier, K. Moudgil, S. Barlow, S. R. Marder, and M. C. Hersam, “Controlled n-type doping of carbon nanotube transistors by an organorhodium dimer,” Nano Lett., 16, 4329 (2016). [14] M. L. Geier, P. L. Prabhumirashi, J. J. McMorrow, W. Xu, J.-W. T. Seo, K. Everaerts, C. H. Kim, T. J. Marks, and M. C. Hersam, “Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control,” Nano Lett., 13, 4810 (2013). [15] M. L. Geier, J. J. McMorrow, W. Xu, J. Zhu, C. H. Kim, T. J. Marks, and M. C. Hersam, “Solution-processed carbon nanotube thin-film complementary static random access memory,” Nature Nanotechnology, 10, 944 (2015).