Abstract
Surface modification processes resulting from glancing angle gas cluster ion irradiation were studied by molecular dynamics (MD) simulations. Large Ar2000 gas clusters accelerated with 20keV were irradiated onto Si(100) substrates to which were attached small Si block-shaped (size of 4096, 16384 or 65536 atoms) structures. The MD simulations revealed that when an Ar cluster is irradiated at 80° of incident angle, the cluster slides on the substrate surface without damage and impacts on the wall of the block structures causing multiple collisions, and dynamic deformation of the blocks. Especially, in the case of the impact on the small surface block (Si4096), a large part of the block was sputtered as a large chunk, and the target substrate was smoothed with only one cluster impact. The evaluation of the damage distribution showed that silicon interstitials, caused by the multiple collision mechanism, reside within 15Å from the surface, which suggests that low-damage and high-performance surface modification processing would be realized by utilizing a glancing angle gas cluster ion beam irradiation technique.
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