Atomic layer etching of Cu film using gas cluster ion beam

Abstract

In this work, atomic layer etching (ALE) with a gas cluster ion beam (GCIB) was investigated for the first time. Since gas cluster ions produce dense energy deposition without severe damage, effective, low-damage, and low-temperature removal of chemically altered surface layers is expected. In this study, ALE of Cu films upon oxygen GCIB (O2-GCIB) irradiation in the presence of acetic acid vapor was investigated. Cu atoms were removed from the surface layer, owing to chemical reactions between adsorbed acetic acid molecules and Cu atoms upon O2-GCIB irradiation at room temperature. Since there was no physical sputtering upon 5 kV O2-GCIB irradiation, a self-limiting etch stop was observed after removal of the top layer. Conversely, upon 20 kV O2-GCIB irradiation, Cu atoms were physically sputtered after removal of the chemically altered surface layer. By applying low-energy (5 kV) GCIB irradiation, ALE with GCIB was achieved at room temperature.