Abstract
Molecular dynamics simulations based on a modified Stillinger-Weber potential are used to investigate the elementary steps of bonding two Si(001) wafers. The energy dissipation and thus the dynamic bonding behaviour are controlled by the transfer rates for the kinetic energy. The applicability of the method is demonstrated by studying the interaction of perfect wafer surfaces (UHV conditions). First calculations covering the influence of surface steps, rotational misorientations and adsorbates are presented.
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