Abstract
Silicon thin-film growth from cluster beams at a substrate temperature of 300 K has been investigated with molecular-dynamics simulations utilizing the Stillinger-Weber two- and three-body interaction potential. The spreading of Si-atom clusters and the structure of grown films have been studied as a function of the incident cluster velocity. Our simulation results show that the films grown at a low substrate temperature of 300 K are amorphous and the substrates suffer heavier damage with an increase in the cluster velocity. As compared with our previous results on Si thin-film growth at a substrate temperature of 1000 K, we found that substrate temperature and cluster velocity had a significant impact in determining the structure of the grown films and the cluster spreading on the substrate.
Published Version
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