Abstract
Silicon thin film growth from cluster beams has been investigated with molecular-dynamics simulations utilizing the Stillinger–Weber two- and three-body interaction potential. The spreading of Si-atom clusters and the structure of grown films have been studied as a function of incident cluster velocity. Higher surface diffusion and spreading of the deposited clusters was achieved with increasing cluster velocity. Epitaxial Si (1 1 1) growth was obtained under a moderate cluster velocity.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
