Abstract
Ge thin-film growth from cluster beams has been investigated withmolecular-dynamics simulations utilizing the Stillinger-Weber two- andthree-body interaction potentials. The spreading of Ge-atom clusters and thestructure of grown films have been studied as a function of incident clustervelocity. Higher surface diffusion and spreading of the deposited clusterswere achieved with a moderate cluster velocity. The epitaxial Ge (111) growthwas obtained under this cluster velocity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Modelling and Simulation in Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
