Molecular Dynamics Simulation and Analysis the Primary Radiation Damage of 4H-Sic Crystal Material Induced by 10kev Si PKA Under Different Temperature

Abstract

Based on the molecular dynamics method and the simulation toolkit LAMMPS, the distribution characteristics of PKA tracks and the different kinds of point defects in 4H-SiC crystal material induced by 10keV Si PKA with specific incident direction under different temperature conditions were simulated analyzed in this paper. The mechanism of the counts of the various point defects changed with time under a certain temperature (300K) condition is compared and analyzed. Simulation and analysis of the spatial distribution of point defects in the stable stage with PKA track and temperature changes. The results of this paper provide an important basis for further exploring the formation mechanism of 4H-SiC radiation displacement damage defects, predicting the thermodynamic properties of 4H-SiC matrix materials by displacement damage, and the electrical characteristics of 4H-SiC devices/detectors.