Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures

Abstract

The performance of on-orbit GaAs-based solar cells is susceptible to the displacement damage effect. The proton-induced primary displacement damage in GaAs on a geosynchronous equatorial orbit (GEO) was simulated and analyzed by combining the Monte Carlo (MC) and molecular dynamics (MD) methods. The MC simulation provided the distribution of primary knock-on atoms (PKAs) in GaAs induced by GEO-related protons to the MD simulation. In MD simulations, the effects of radiation fluence and ambient temperature on the displacement damage were considered. The simulation results showed that GEO-related protons generated a significant number of PKAs within an energy range of below 10 keV in GaAs. The high-fluence radiation emulated by the binary PKA could generate more point defects and cluster defects in GaAs than the low-fluence radiation emulated by single PKAs. As compared to room temperature (300 K), both a low (100 K) and high (500 K) ambient temperature could deteriorate the displacement damage. In addition, a high ambient temperature of 500 K could induce widespread thermal spikes in GaAs as compared to 100 and 300 K. This work can provide useful insight into the proton-induced displacement damage in GaAs and the radiation hardening of GaAs-based photoelectric devices in space.