Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers

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Molecular beam epitaxial growth of InSb sub-monolayer insertions in an InAs matrix, exhibiting intense mid-IR photoluminescence (PL) up to room temperature, is reported. The InSb insertions are fabricated by an exposure of the InAs surface to an antimony Sb 4 flux. The nominal thickness of the insertions grown at different temperatures (400–485 °C) changes in the 0.6–1 monolayer range, resulting in the emission wavelength variation from 3.9 to 4.3 μm at 300 K. An integral PL intensity drop from 80 to 300 K does not exceed 20 times. The laser emission at a wavelength of 3.08 μm ( T = 60 K ) with the threshold current density of 3–4 kA/cm 2 under pulse injection pumping has been demonstrated in a hybrid p-AlGaAsSb/InAs/n-CdMgSe double heterostructure with the multiple type II InSb/InAs nanostructures in the active region.