Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers

Abstract

The effect of the growth rate (flow density of In atoms) on the composition of InAs $${}_{x}$$ Sb $${}_{1-x}$$ (100) solid solutions at molecular beam epitaxy is experimentally studied using the flows of As $${}_{2}$$ and Sb $${}_{4}$$ molecules. It is established that the increase in the growth rate at constant fraction of As $${}_{2}$$ and Sb $${}_{4}$$ molecules in the flow of molecules of group V and unchanged fraction of the flow of indium atoms to the total flow of molecules of the group V elements leads to decrease in the arsenic fraction in the solid solution. It is shown that the growth rate is an independent parameter of the process of molecular beam epitaxy determining the composition of InAs $${}_{x}$$ Sb $${}_{1-x}$$ solid solutions. The mechanism of generation of the solid solution compound explaining the role of growth rate is proposed.