Abstract
The elementary growth process of molecular beam epitaxy (MBE) so far understood is reviewed taking GaAs MBE as an example. The factors which govern the surface diffusion are discussed first. It is suggested that surface atomic structures including surface reconstructions strongly influence the diffusion although not much has been known about the atomic process involved. Then, the incorporation of atoms at the step edge is studied. In GaAs MBE, it is shown that the surface flux ratio of Ga to As is one of the most important factors which govern the incorporation rate of Ga as well as the growth temperature. Finally, an overall view of the elementary growth process of MBE is discussed.
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