Abstract
Tensile-strained pseudomorphic Ge1–x–ySnxCy was grown on GaAs substrates by molecular beam epitaxy using carbon tetrabromide (CBr4) at low temperatures (171–258 °C). High resolution x-ray diffraction reveals good crystallinity in all samples. Atomic force microscopy showed atomically smooth surfaces with a maximum roughness of 1.9 nm. The presence of the 530.5 cm−1 local vibrational mode of carbon in the Raman spectrum verifies substitutional C incorporation in Ge1–x–ySnxCy samples. X-ray photoelectron spectroscopy confirms carbon bonding with Sn and Ge without evidence of sp2 or sp3 carbon formation. The commonly observed Raman features corresponding to alternative carbon phases were not detected. Furthermore, no Sn droplets were visible in scanning electron microscopy, illustrating the synergy in C and Sn incorporation and the potential of Ge1–x–ySnxCy active regions for silicon-based lasers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.