Abstract
We provide a review of the current state, problems and their solutions, and potential possibilities to develop the technology of the Molecular Beam epitaxy (MBE) to obtain CdHgTe structures on various substrates for infrared detectors. We present the data about MBE supervacuum units control tools for growth processes, collected according to used substrates preparation processes for substrate surfaces, growth of buffer layers on alternating substrates, and growth and alloying of CdHgTe layers. We present main defects of structures (such as line defects and macrodefects) and their least achieved concentration levels limiting the quality of detectors. We consider the data about problems of the external alloying of CdHgTe layers by dopants and the obtained electrophysical parameters of such layers. We provide photoelectric parameters of IR-detectors, close to theoretical ones and showing that the MBE technology is ready to produce CdHgTe/Si structures on six-inch diameters. We demonstrate results of the research and development of the growth and alloying of CdHgTe structures on GaAs substrates and Si substrates of 76.2-mm diameters, implemented at the Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences.
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