Abstract
We report the successful growth of GaAs/AlAs superlattices having interface planes tilted with respect to the substrate surface plane. The amount of tilt and the superlattice period may be controlled by adjusting the growth parameters. The tilted superlattices (TSL’s) were produced by depositing fractional monolayer superlattices (GaAs)m(AlAs)n, with p=m+n≂1, on vicinal (001) substrates. We demonstrate the growth of quantum wirelike structures produced by placing short sections of TSL between horizontal layers of AlAs. Variations of the TSL period and tilt, both on uniform surfaces and on surfaces containing defects, yield insight to the growth kinetics and to the influence of variations in the growth parameters during molecular-beam epitaxy growth.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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