Abstract
We report on molecular beam epitaxial (MBE) growth of AlGaAs/GaAs superlattices on several GaAs (110) substrates, i.e. nominal (110) substrates and vicinal (110) substrates misoriented toward (111)A and (111)B. MBE growth of the superlattices on vicinal (110) substrates misoriented toward (111)B has been found to produce quantum well wire-like structures being coherently aligned toward the 〈110〉 direction with almost equal spacing. We discuss the formation mechanism of the quantum well wire-like structures which is closely related with the MBE growth mechanism on (110) surfaces.
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