Abstract
InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum.
Highlights
Infrared detector technology is one of most important opto-electric devices
Considering the obvious growth temperature difference between InGaAs and AlGaAs, it is wise to grow InGaAs quantum well under low temperature, increase the growth temperature to grow the AlGaAs barrier in order to achieve best crystal quality
The InGaAs quantum well is as thin as around 2.7 nm in the 4.3 μm quantum well infrared photodetector (QWIP), it is very hard to measure the precise composition by X-ray diffraction (XRD) technology
Summary
Infrared detector technology is one of most important opto-electric devices. It has been developed from bulk material to the quantum well structure [1,2]. GaAs-based InGaAs/AlGaAs QWIP working in the MWIR region is studied [6,7,8,9]. The high mobility of In atoms at the substrate made the surface morphology of InGaAs layer very sensitive to the growth parameters [16] These problems would make the precise peak wavelength control difficult since the absorption peak wavelength is very sensitive to the structural characteristics of QWIP, such as the In composition and its profiles in the quantum well [17,18]. With low-temperature capping technology of a thin AlGaAs, the In composition can be well controlled
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