Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5μm

Abstract

The solid-source molecular-beam of low-threshold GaAs-based GaInNAsSb lasers is discussed. A general narrowing of the window was observed with increasing wavelength, due to the increased nitrogen required (⩾1%), and has historically made high-performance devices more difficult to achieve beyond ∼1.35μm. The introduction of and reduction in plasma-related damage from the rf nitrogen dramatically improved material quality and widened the window. We validate these observations with 1.5μm edge-emitting ridge-waveguide lasers with cw threshold as low as 440A∕cm2, peak CW output powers of 431mW, peak cw wallplug efficiencies >16%, and pulsed output powers >1W.