Abstract
GaAs power field effect transistors (FET’s) with the highest power output per unit gate width (0.46 W/mm) reported to data at Ka‐band frequency were fabricated using molecular beam epitaxy material with active layer doping of 3.6×1017 cm3. Power output of 110 mW and conversion efficiency of 11% were achieved with half‐micron gate GaAs FET’s in a 30 GHz amplifier with an associated gain of 3.4 dB. This report describes the molecular beam epitaxy (MBE) growth conditions and results of characterization of the power FET.
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