Molecular beam epitaxy growth of AlAs1−xBix

Abstract

High quality AlAs1−xBix layers with Bi composition of 3%–10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As–Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 Å.