Abstract
We discuss the molecular beam epitaxy (MBE) growth methods of emission wavelengthcontrol and property investigations for different types of InAs/(In)GaAsN/GaAsheterostructures containing InGaAsN quantum-size layers: (1) InGaAsN quantum wellsdeposited by the conventional mode in a GaAs matrix, (2) InAs quantum dots deposited ina GaAsN matrix or covered by an InGaAs(N) layer, and (3) InAs/InGaAsN/GaAsNstrain-compensated superlattices with quantum wells and quantum dots. The structures underinvestigation have demonstrated photoluminescence emission in a wavelength range of∼1.3–1.8 µm at room temperature without essential deterioration of the radiative properties.
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