Chapter 1 - Growth and doping of Te-based II–VI layers and quantum structures by molecular beam epitaxy

Abstract

This chapter discusses the surface studies of Te-based materials, the physics of molecular beam epitaxy (MBE) growth, the doping process in MBE growth, and magneto-optical studies of doped quantum well structures. A general introduction to the review of situated Te-based compounds in the II–VI semiconductor family and research on the physics of Te-based surfaces and epitaxial growth mechanisms of ZnTe/CdTe heterostructures in MBE are explained in the chapter. Thermodynamic insights that can be used to obtain a better understanding of the physics underlying the doping process, doping efficiency, and limits of the doping level—particularly p-doping with nitrogen as the acceptor in alloys containing Mg atoms—are discussed, including the solubility and the diffusivity of the dopant. The chapter focuses on magneto-optical studies of doped quantum structures. A bound state—the charged trion—is a very sensitive tool for studying the physics of the 2D carrier gas (electrons and holes) that is created in modulation-doped quantum wells (QWs) made of Te-based compounds.