Abstract
InP was grown by means of molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) using polycrystalline InP as the phosphorus source. Pregrowth thermal cleaning of the InP substrate was performed under either P2-beam or As4-beam irradiation. It is shown that polycrystalline InP is a highly controllable and useful source of a P2 beam for MBE and MEE growth of high-quality InP in the standard MBE system. The As4 cleaning was found to be more controllable and reproducible than the P2 cleaning. Although the As4 cleaning produced an ultrathin InAs interface layer, no inclusion of As was detected and no influence was found on the crystalline and electrical properties of the epilayer. Unintentionally doped layers showed n-type conduction with carrier concentration in the range of 5×1016-1×1018 cm-3, showing a remarkable dependence on the growth temperature.
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