Abstract
In Ga As ∕ Al As ∕ Al As Sb coupled double quantum wells (CDQWs) with extremely thin AlAs coupling barriers between InGaAs wells were gown by molecular beam epitaxy. The structural quality was examined by the high-resolution x-ray diffraction and the high-energy transmission electron microscopy. It is confirmed that the CDQWs with the 2 monolayer (ML) AlAs coupling barrier was successfully grown. Clear and sharp peaks corresponding to interband transitions were observed in the photoreflectance spectra of CDQWs with 2 and 3 ML of AlAs coupling barrier. The calculated transition energies correspond well with the measured energies. By reducing the AlAs coupling barrier thickness from 3 to 2 ML, the interband transition energy was redshifted toward the communication wavelength of 1.55μm as expected.
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More From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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