Molecular beam epitaxial growth of ZnSe(111) films on misoriented GaAs(111) A substrates

Abstract

The properties of ZnSe(111) films grown on misoriented GaAs(111)A substrates by molecular beam epitaxy, which includes the improvement in the crystalline quality and nitrogen-doping characteristics of ZnSe(111)A epilayers, were reported. Mirror-like surface morphologies, twin-free crystals, and, in the PL spectra, a remarkable decrease in the deep-level emission and an increase in the exciton emissions were obtained in ZnSe(111) epilayers on misoriented substrates. The net acceptor concentration decreased with increasing the amount of nitrogen gas supplied to the plasma cell. This character was opposite to the results of N-doped ZnSe(100) epilayers prepared in our laboratory. The doping character in ZnSe(111)A epilayers was discussed based on the N-Zn bond number on the (111)A surfaces.