Abstract
The crystalline quality of ZnSe(111) epilayers grown by molecular beam epitaxy can be improved using misoriented GaAs(111)A substrates. The epilayers grown on just-oriented GaAs(111)A substrates showed twinning, hazy surface morphology and weak photoluminescence spectra where deep-level emission dominates. Twin-free ZnSe(111) epilayers with mirrorlike surface morphologies and strong exciton emission were obtained on the GaAs(111)A substrates 10°-misoriented toward [100] direction.
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