Abstract
The electrical properties of MBE-grown GaSb have been investigated as a step toward obtaining n-AlGaSb epilayers with low carrier concentrations and high mobilities for high-performance photodetectors at 2 μm and beyond. By doping with Te donors provided by a GaTe source, we have obtained n-GaSb layers, on (100) GaAs substrates, with Hall mobilities as high as 7600 and 12 600 cm2/V s at room temperature and 77 K, respectively. These values are ∼50% greater than the highest previously reported values for n-GaSb epilayers grown on similar substrates.
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