Abstract
Molecular beam epitaxial (MBE) growth of ZnTe and ZnTe- CdTe superlattice on GaAs(100) substrates was investigated by reflection high energy electron diffraction. Optimal growth parameters were proposed. Characterization of ZnTe film and ZnTe- CdTe superlattices was performed using X-ray diffraction, photoluminescence and Raman scattering. It was found that although growth conditions play an important role, the main condition for achieving a high-quality CdTe-ZnTe superlattice is to avoid the generation of misfit dislocations.
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