Abstract
Investigations of elemental diffusion in (001) and (111) oriented CdTe and ZnTe layers grown by molecular beam epitaxy on (001) GaAs substrates show high Ga diffusion along dislocations and defects generated at the substrate-epilayer interface. The use of CdTe/ZnTe superlattice buffer layers and nucleation on near-atomically planar GaAs surfaces is shown to suppress Ga diffusion to background detection levels.
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