Abstract
InAs quantum dots (QDs) were grown on SiOx films by molecular beam deposition (MBD), and then an SiOx capping layer was deposited by rf magnetron sputtering. High arsenic pressure and As2 molecular beam flux enhanced InAs nucleation and the dot growth. Ultrahigh-density InAs QDs with 8.5 × 1011 cm−2 was obtained for As2 molecular beam of 3.0 × 10−5 Torr. The amount of InAs growth grown by As2 was about three times higher than that by As4. Photoluminescence (PL) properties depended on InAs QD structures. The vacuum transport process between InAs MBD and SiOx sputtering was effective to improve the quality of InAs QDs on a SiOx film. Furthermore, strong PL intensity was obtained from InAs QDs in a SiOx matrix, fabricated by the vacuum transport process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
