Moisture-modulated resistive switching behavior based on CaTiO3 prepared by the appropriate NaOH concentration

Abstract

It is well known that the multi-mode responsive memristor has a great application prospect in the complex environment. The CaTiO3-based memristor was prepared under different NaOH concentrations, which exhibited an obvious resistive switching (RS) behavior at the working voltage of 1 V. The experimental results indicate that the purity of CaTiO3 is affected by different NaOH concentrations, leading to changes in its microstructure. Interestingly, moisture as an electrical stimulus can change the RS behavior. By comparison, a large memory window with stable cycling performance can be observed at the relative humidity (RH) of 60%. A physical model, which involves Ag+ ions, oxygen vacancy (Vo) and OH− ions, was proposed to explain the charge transport mechanism of the moisture-modulated RS behavior. As an effective method to improve the memristive characteristics, the moisture-modulated RS behavior provides a great application for multi-mode-controlled memristor in physiological monitoring, such as sweat and infant urine monitoring.