Abstract
This paper represents theoretical and experimental results using the moiré alignment technique to projection photolithography, as part of the mix and match lithographic system to go with the proximity x‐ray lithography. Such a system is advantageous because the same alignment marks on the wafer are used both for photo‐ and x‐ray lithography. The moiré signals are detected at the reverse image point of reflected beams from the moiré interference field between the wafer marks and the projection image of reticle marks through a reduction lens on the wafer marks. The basic experimental values agreed with theoretical results calculated from a grating pitch of 4 μm on the wafer. This paper also represents an alignment method which permits both fine and rough alignment simultaneously by using single alignment optical system eventually giving a wide alignment zone. These moiré alignment techniques were applied to an actual step‐and‐repeat photolithographic system, resulting in outstanding precision.
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