Modulation-doped quantum dot infrared photodetectors using self-assembled InAs quantum dots

Abstract

We have designed and fabricated a new quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. The peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels.