Abstract
The effects of growth interruption times combined with Sb exposure of GaAsSb/GaAsmultiple quantum wells (MQWs) have been investigated by using phototransmittance(PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltagespectroscopy (WMSPS). The features originated from different portions of the samples,including interband transitions of MQWs, interfaces and GaAs, are observed and identifiedthrough a detailed comparison of the obtained spectra and theoretical calculation. Ared-shift of the interband transitions and a broader lineshape of the fundamentaltransition are observed from samples grown under Sb exposure compared to thereference sample grown without interruption. The results can be interpreted in termsof both increases in Sb content and mixing of Sb in the GaAs interface layers.An additional feature has been observed below the GaAs region in the sampleswith Sb treatment. The probable origin of this additional feature is discussed.
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