Abstract
The modulation spectroscopy on 1.45 μm metamorphic InAs quantum dots (QDs) with In 0.3Ga 0.7As capping layer grown on GaAs substrate by molecular beam epitaxy (MBE) has been investigated by differential absorption (Δ α), electro-reflectance (ER), and photo-reflectance (PR) spectra at different reverse bias. The optical transitions of the ground state, excited states, and wetting layers were identified and discussed. The micro-structure characterization was also analyzed by TEM and AFM. The variation of refractive index spectra (Δ n) by calculating Δ α spectra through Kramers–Kronig transform is obtained to study the electro-absorption behaviors. Additionally, a simple physical model is proposed to explain the experimental values between the Δ n and Δ R spectra performed by two different modulation spectroscopies (Δ α and ER). The built-in electric field of metamorphic InAs QDs structure was determined to analyze the Franz–Keldysh Oscillation (FKO) extreme in PR spectra with different bias.
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