Abstract
This paper reviews some recent interesting applications of modulation spectroscopy to study the electronic transitions in GaAs GaAlAs parabolic quantum wells, short-period, strained layer | frsol|GeSi/Si, GeSi Ge and GeSi Ge 0.8 Si 0.2 superlattices and strained layer InGaAs GaAs single quantum wells. In addition, the discussion will include the use of SIN + (SIP +) structures to evaluate surface electric fields and hence Fermi level pinning, investigation of epilayers/heterojunctions, studies of the two-dimensional electron gas in modulation-and δ-doped material, work on actual device structures such as HBTs and finally a new variation of the modulation method of differential reflectance.
Published Version
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