Modulation of micro-structural, opto-electronic and photo-induced fluorescence properties in sol-gel derived Pb1-xZnxO nanoparticles through the analytical study of vacancy-type defects

Abstract

In the present work, the doping effect of Zn2+ ion (varying doping concentrations in the range of 0 %–30 %) on PbO nanoparticles (NPs) has been investigated proficiently. This study aims at in-depth analysis of the structure-property relationships of the sol-gel derived Zn doped PbO (Pb1-xZnxO) NPs, especially the vacancy evolved properties and the luminescence properties. The X-ray powder diffraction (XRD), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), field emission scanning electron microscopy (FESEM) and Fourier-transform infrared (FT-IR) spectroscopic characterization analyses justified the nanocrystallinity of the Pb1-xZnxO powdered NPs while the mean crystallite sizes were located in between 12 and 36 nm range. Williamson – Hall (W – H) method revealed a monotonous increase of the lattice strain which is compatible with the decrease of NPs’ crystallite size by increase in the Zn2+ doping level. The replacement of Pb2+ ions with the Zn2+ ions caused the reduction of crystallite size by the higher Zn2+ doping level. Prominent peaks of Zn, Pb and O elements are noticed in energy dispersive X-ray spectroscopic (EDS) characterization. The elemental distributions of the chemicals present in the NPs were explored by the elemental mapping analysis. The optical absorption (OA) analysis indicated that the energy band gap (Eg) can be estimated to be 2.21, 2.36, 2.55 and 2.70 eV for 0, 10, 20 & 30 % Zn doped PbO NPs, respectively. The positron annihilation lifetime (PAL) spectroscopic studies evidenced the presence of vacancy type defects within the NPs and an increase in defect concentrations has been observed by the increase in Zn concentrations. The photo-induced fluorescence (FL) emission spectra exhibited three luminescence peaks around the wavelengths 430 nm, 490 nm and 522 nm for all the NPs. The observations suggested the possibility of tailoring the characteristics of the synthesized NPs for practical applications in the field of optoelectronics.