Abstract
HfO2/ZrO2 multilayer films were deposited by atomic layer deposition (ALD) method. The remnant polarization and the dielectric constant are remarkably improved to 10.2 µC/cm2 and 23 respectively, and the leakage current density is dramatically reduced by three orders of magnitude via regulating the single-layer thickness. The conduction mechanisms of the ferroelectric multilayer films are also analyzed, and the space-charge-limited current is believed to play an important role on reducing the leakage current in the multilayer structures.
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