Abstract
In this research, benzyl viologen (BV) is incorporated to enhance the n-type carriers in rapid thermally grown MoS2 thin films. A (002) oriented XRD peak, around 2θ = 14.1°, has been observed in BV treated MoS2 thin films. Raman spectra depicted the presence of two characteristics peaks around 389 cm−1 and 408 cm−1 corresponding to E12g and A1g modes of MoS2, respectively. The ideality factor and built-in voltage for the MoS2/Si heterojunction, treated with 25 mM and 6 coats of BV solution, were found to be 1.27 and 0.30 V, respectively for annealing temperature of 300 °C. The carrier concentration, calculated from Mott-Schottky analysis, is found to rise with the increase in BV concentration and annealing temperature up to 300 °C. The BV treated MoS2/Si heterojunction revealed the current On/Off ratio, rise and fall time of 520, 1.9 s and 1.7 s, respectively for the exposure of 940 nm IR light. With 850 nm IR illumination, the current On/Off ratio, rise and fall time decreased to 322, 1.4 s and 1.3 s, respectively. The results obtained provide the preliminary information for the fabrication of efficient next generation IR detectors.
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