Abstract
This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical properties are investigated using Silvaco TCAD software (Version 5.0.10.R). It demonstrates that the electric performances of PND with a single n-type diamond layer are sensitive to the doping concentration and electrode location of the n-type diamond. To further suppress the electric field crowding and obtain a better balance between breakdown voltage and on-resistance, a double-layer junction termination structure is introduced and evaluated, yielding significantly improved electronic performances. Those results provide some useful thoughts for the design of vertical diamond PND devices.
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