Abstract
In this work, Silvaco TCAD is used to design a vertical trenched diamond PN junction diode. Comparing with the conventional beveled PN junction diode, the PN junction on both trench and mesa of the trenched PN junction diode contribute to the conduction, resulting in the obvious enhanced current density. It reveals that the doping concentration and thickness of n-type diamond, as well as the length ratio between trench and mesa, have significant effects on the performances of the trenched PN junction diode. A diamond PN junction diode with good balance between Ron and VBD has been realized after optimizing those parameters. Those results provide some valuable references for the design and fabrication of diamond PN junction diodes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
