Abstract
Modulation of carrier density in graphene has been demonstrated on single-crystalline or polymer ferroelectrics as gating dielectric. However, its tuning from p-type to n-type in air at room temperature has not yet been reported. In this paper, such a tuning is realized on polycrystalline PbZr0.52Ti0.48O3 (PZT) ceramic under polarization field in the range of – 22.5kV/cm to 22.5kV/cm through the construction of a “graphene/PZT + suspended graphene” network film. The maximum hole and electron density of graphene in our fabricated Hall bar device are measured to be 6.3×1013cm−2 and 1.7×1013cm−2 respectively. There exhibit certain features in graphene's Raman spectrums corresponding to its transition from p-type to n-type with relationship to the PZT surface morphology and the contact status between graphene and PZT surface. At last, an in-plane graphene PN junction is demonstrated on PZT ceramic as well.
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