Abstract
A nearly square-like ferroelectric hysteretic loop of spin-coated and crystallized poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with a remnant polarization 2 Pr of 20 µC cm−2 was obtained. The electrical transport properties of the P(VDF-TrFE)/AlGaN/GaN structure were investigated. The results show that the carrier density Ns, mobility μ, and resistivity ρ of AlGaN/GaN 2DEG can be directly and strongly modulated by an external electric field via the ferroelectric polymer P(VDF-TrFE): the Ns, μ, and ρ of AlGaN/GaN 2DEG exhibit closed hysteretic loops under a closed external electric field and the carrier density can be tuned as large as 235% only by changing the external electric field.
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