Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias

Abstract

Interfacial dislocation networks were formed in silicon by direct bonding technology. Cathodoluminescence and deep level transient spectroscopy measurements verified that the D1 luminescence at 1.5 μm is associated with carrier transitions via a dislocation-related deep level at 0.35 eV. Both the experiment and theoretical calculations demonstrate that application of an external bias voltage on the bonding interface increases the majority carrier density at this deep level, thereby enhancing the local dislocation-related luminescence. However, beyond a critical voltage, corresponding to saturation of the majority carrier occupancy, the luminescence intensity decreases, due to the reduction in minority carrier density.