Abstract
In this work, bottom-gate-type ferroelectric field effect transistors (FeFET) are fabricated. Sol-gel prepared aluminum doped zinc oxide (ZnO) and Lead Zirconate Titanate (PZT) are applied as channel and gate dielectric respectively. Uniform and dense ZnO is fabricated and good conductivity is obtained. Polarization of PZT is found to decrease after Al doped ZnO is prepared on it. Obvious modulation effects of PZT on the channel are found. Capacitance of the channel and gate dielectric stacked structure is tested. And channel resistance is found to change with the direction of remnant polarization in PZT. Mechanisms of the modulation effects are investigated.
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