Abstract
A modulation-doped InAs-InGaAs quantum dot (QD) longwave infrared photodetector (QDIP) is reported with a detection peak wavelength of 8.2 µm. The QDIP showed a high photoresponsivity of 0.8 A/W and a high quantum efficiency of 3.4% at the bias voltage of 0.4 V. The performance demonstration indicates that the modulation-doped QDIP is suitable for longwave infrared photodetection.
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